DatasheetsPDF.com

BUZ12A

Part Number	BUZ12A
Manufacturer	Siemens Semiconductor Group
Description	Power Transistor
Published	Mar 23, 2005
Detailed Description	BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2...
Datasheet	BUZ12A PDF File

Overview

BUZ 12 A Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 A VDS 50 V ID 42 A RDS(on) 0.
035 Ω Package TO-220 AB Ordering Code C67078-S1331-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 44 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 42 2.
5 mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 23.
2 µH, Tj = 25 °C Gate source voltage Power dissipation 41 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance,...

Similar Datasheet

BUZ10 N-Channel Power MOSFET - STMicroelectronics
BUZ10 Power Transistor - Siemens Semiconductor Group
BUZ10 N-Channel MOSFET - INCHANGE
BUZ100 Power Transistor - Siemens Semiconductor Group
BUZ100 N-Channel MOSFET - INCHANGE
BUZ100L Power Transistor - Siemens Semiconductor Group
BUZ100S Power Transistor - Siemens Semiconductor Group
BUZ100SL Power Transistor - Siemens Semiconductor Group
BUZ100SL-4 Power Transistor - Siemens Semiconductor Group
BUZ101 Power Transistor - Siemens

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)