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BUZ12

Part Number	BUZ12
Manufacturer	Siemens Semiconductor Group
Description	Power Transistor
Published	Mar 23, 2005
Detailed Description	BUZ 12 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D...
Datasheet	BUZ12 PDF File

Overview

BUZ 12 Not for new design SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 12 VDS 50 V ID 42 A RDS(on) 0.
028 Ω Package TO-220 AB Ordering Code C67078-S1331-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 65 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 42 2.
5 mJ ID = 42 A, VDD = 25 V, RGS = 25 Ω L = 23.
2 µH, Tj = 25 °C Gate source voltage Power dissipation 41 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chi...

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