BUZ104L

BUZ 104L SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated Logic Level dv/dt rated Low on-resistance 175 °C operating temperature also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 104L VDS 50 V ID 17.5 A RDS(on) 0.1 Ω Package TO-220 AB Ordering Code C67078-S1358-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 17.5 Unit A ID IDpuls 70 TC = 29 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 35 dv/dt 6 mJ ID = 17.5 A, VDD = 25 V, RGS = 25 Ω L = 114 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 17.5 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C 60 Semiconductor Group 1 07/96 BUZ 104L Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 2.5 ≤ 75 E 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 1 10 10 0.085 2 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = -40 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA µA nA Ω 0.1 VDS = ...