BUZ102S

BUZ 102 S SPP52N05 SIPMOS ® Power Transistor N channel Enhancement mode Avalanche-rated dv /dt rated 175°C operating temperature also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 52 A RDS(on) 0.023 Ω Package Ordering Code BUZ 102 S TO-220 AB Q67040-S4011-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 52 37 Pulsed drain current TC = 25 °C IDpuls 208 E AS Avalanche energy, single pulse ID = 52 A, V DD = 25 V, RGS = 25 Ω L = 181 µH, Tj = 25 °C mJ 245 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 52 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 52 12 A mJ kV/µs dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 120 V W Semiconductor Group 1 30/Jan/1998 BUZ 102 S SPP52N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 1.25 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 90 µA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current...