BUZ101SL-4

Preliminary data BUZ 101SL-4 SIPMOS ® Power Transistor Quad-channel Enhancement mode Logic level Avalanche-rated dv/dt rated Type BUZ 101SL-4 VDS 55 V ID 4.1 A RDS(on) 0.075 Ω Package P-DSO-28 Ordering Code C67078-S. . . .- . . Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.1 Unit A ID IDpuls 16.4 TA = 25 °C Pulsed drain current one channel active TA = 25 °C Avalanche energy, single pulse EAS 90 dv/dt 6 mJ ID = 4.1 A, VDD = 25 V, RGS = 25 Ω L = 10.7 mH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 4.1 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation ,one channel active VGS Ptot ± 14 2.4 V W TA = 25 °C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 ... + 175 -55 ... + 175 55 / 175 / 56 °C Semiconductor Group 1 02/Oct/1997 Preliminary data BUZ 101SL-4 Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. max. tbd 62.5 K/W Unit RthJS RthJA - 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 1.6 0.1 10 0.06 2 V VGS = 0 V, ID = 0.25 ...