®
BUXD87
HIGH VOLTAGE NPN POWER TRANSISTOR
s
s s s
s
REVERSE PINS OUT Vs STANDARD IPAK/DPAK PACKAGE HIGH VOLTAGE CA...
®
BUXD87
HIGH VOLTAGE
NPN POWER
TRANSISTOR
s
s s s
s
REVERSE PINS OUT Vs STANDARD IPAK/DPAK PACKAGE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") IPAK TO-251 (Suffix "-1")
3 2 1
1
3
APPLICATIONS: SWITCH MODE POWER SUPPLIES s GENERAL PURPOSE SWITCHING
s
DPAK TO-252 (Suffix "T4")
DESCRIPTION The BUXD87 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1000 450 5 0.5 1 0.3 0.6 20 -65 to 150 150 Unit V V V A A A A W
o o
C C
April 1999
1/6
BUXD87
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEV I EBO VCEO(sus) V BEO V CE(sat) ∗ V BE(sat) ∗ h FE ∗ fT ts tf Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Collector-Emitter Sustaining Volta...
