BUX98

BUX98 BUX98A HIGH POWER NPN SILICON TRANSISTORS s s s s s SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS HIGH FREQUENCY AND EFFICENCY CONVERTERS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 (version R) DESCRIPTION The BUX98 and BUX98A are silicon multiepitaxial mesa NPN transistor in jedec TO-3 metal case, intended and industrial applications from single and three-phase mains operation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CER V CES V CEO V EBO IC I CM I CP IB I BM P tot T stg Tj July 1997 Parameter BUX98 Collector-Emitter Voltage (RBE = ≤ 10 Ω ) Collector-Base Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Collector Peak Current non Rep. (tp < 20 µ s) Base Current Base Peak Current (t p < 5 ms) Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature 850 850 400 7 30 60 80 8 30 250 -65 to 200 200 Value BUX98A 1000 1000 450 V V V V A A A A A W o o Unit C C 1/4 BUX98 / BUX98A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CES I CEO I EBO Parameter Collector Cut-off Current (R BE = 10 Ω ) Collector Cut-off Current (V BE = 0 ) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE =...