BUX80

BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS SWITCHING REGULATORS s MOTOR CONTROL s HIGH FREQUENCY AND EFFICENCY CONVERTERS s 1 2 TO-3 DESCRIPTION The BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control system applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CER V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-emitter Voltage (V BE = 0) Collector-emitter Voltage (R BE = 50Ω ) Collector-emitter Voltage (I B = 0) Emitter-base Voltage (Ic = 0) Collector Current Collector Peak Current Base Current Total Power Dissipation at T case Storage Temperature Max Operating Junction Temperature ≤ 40 C o Value 800 500 400 10 10 15 5 100 -65 to 150 150 Unit V V V V A A A W o o C C June 1997 1/4 BUX80 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 800 V V CE = 800 V V BE = 10 V I C = 100 mA 400 T case = 125 C o Min. Typ. Max. 1 3 10 Unit mA mA mA V V CEO(sus) ∗ Collector-Emitter SustainingVoltage (I B = 0) V CER(sus) ∗ Collector-Emitter Sustaining Voltage (R BE = 50 Ω ) V CE(sat) ∗ V BE(sat) ∗ h FE ∗ t on ts tf Collec...