BUW85

DISCRETE SEMICONDUCTORS DATA SHEET BUW84; BUW85 Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT82 package. APPLICATIONS Converters Inverters Switching regulators Motor control systems Switching applications. ok, halfpage BUW84; BUW85 PINNING PIN 1 2 3 base collector; connected to mounting base emitter DESCRIPTION 2 1 3 MBB008 1 2 3 MBK107 Fig.1 Simplified outline (SOT82) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUW84 BUW85 VCEO collector-emitter voltage BUW84 BUW85 VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time IC = 1 A; IB = 200 mA; see Fig.7 see Figs 4 and 5 see Figs 4 and 5 Tmb ≤ 25 °C; see Fig.8 resistive load; see Fig.11 open base − − − − − − 0.4 400 450 1 2 3 50 − V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 − − 800 1000 V V CONDITIONS TYP. MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth j-a PARAMETER thermal resistance from junction to mounting base thermal resistance from junction to ambient in free air VALUE 2.1 100 UNIT K/W K/W 1997 Aug 14 1 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with t...