BUW14

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUW14 GENERAL DESCRIPTION High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V TYP. 0.4 MAX. 1000 450 0.5 1 20 UNIT V V A A W µs Tmb ≤ 60 ˚C PINNING - SOT82 PIN 1 2 3 DESCRIPTION emitter collector base PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 0.5 1 0.2 0.3 0.3 20 150 150 UNIT V V A A A A A W ˚C ˚C Tmb ≤ 60 ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 100 MAX. 4.5 UNIT K/W K/W 1 Turn-off current. March 1992 1 Rev 1.000 Philips Semiconductors Product specif...