BUW13W

DISCRETE SEMICONDUCTORS DATA SHEET BUW13W; BUW13AW Silicon diffused power transistors Product specification File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. ge BUW13W; BUW13AW APPLICATIONS Converters Inverters Switching regulators Motor control systems. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter Fig.1 Simplified outline (SOT429) and symbol. 1 2 3 MBK117 2 1 MBB008 3 QUICK REFERENCE DATA SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW13W BUW13AW VCEO collector-emitter voltage BUW13W BUW13AW VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig 2 Tmb ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 15 30 175 0.8 V V V A A W µs VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 0.7 UNIT K/W 1997 Aug 13 1 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW13W BUW13AW VCEO collector-emitter voltage BUW13W BUW13AW IC I...