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BUW12AF Dataheets PDF



Part Number BUW12AF
Manufacturers NXP
Logo NXP
Description Silicon diffused power transistors
Datasheet BUW12AF DatasheetBUW12AF Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BUW12F; BUW12AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base co.

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DISCRETE SEMICONDUCTORS DATA SHEET BUW12F; BUW12AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated 1 Front view ook, halfpage BUW12F; BUW12AF handbook, halfpage 2 1 MBB008 3 2 3 MSB012 Fig.1 Simplified outline (SOT199) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUW12F BUW12AF VCEO collector-emitter voltage BUW12F BUW12AF VCEsat ICsat collector-emitter saturation voltage collector saturation current BUW12F BUW12AF IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 2 and 5 see Fig 2 Th ≤ 25 °C; see Fig.4 6 5 8 20 34 A A A A W µs see Figs 6 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT resistive load; see Figs 12 and 13 0.8 1997 Aug 14 2 Philips Semiconductors Product specification Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW12F BUW12AF VCEO collector-emitter voltage BUW12F BUW12AF ICsat collector saturation current BUW12F BUW12AF IC ICM IB IBM Ptot Tstg Tj Notes 1. Mounted without heatsink compound and 30 ±5 N force on centre of package. 2. Mounted with heatsink compound and 30 ±5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL VisolM Cisol PARAMETER isolation voltage from all terminals to external heatsink (peak value) isolation capacitance from collector to external heatsink collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature Th ≤ 25 °C; see Fig.4; note 1 Th ≤ 25 °C; see Fig.4; note 2 see Figs 2 and 5 see Fig 2 VCE = 1.5 V open base VBE = 0 CONDITIONS PARAMETER CONDITIONS note 2 thermal resistance from junction to ambient BUW12F; BUW12AF VALUE 3.7 2.8 35 UNIT K/W K/W K/W thermal resistance from junction to external heatsink note 1 MIN. − − − − − − − − − − − − −65 − MAX. 850 1000 400 450 6 5 8 20 4 6 34 45 +150 150 V V V V A A A A A A UNIT W W °C °C MAX. 1500 21 V pF UNIT 1997 Aug 14 3 Philips Semiconductors Product specification Silicon diffused power transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS BUW12F; BUW12AF MIN. 400 450 TYP. − − − − − − − − − 18 20 MAX. UNIT − − 1.5 1.5 1.5 1.5 1 3 10 35 35 V V V V V V mA mA mA collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 8 and 9 BUW12F BUW12AF collector-emitter saturation voltage BUW12F BUW12AF VCEsat IC = 6 A; IB = 1.2 A; see Figs 6 and 10 − IC = 5 A; IB = 1 A; see Figs 6 and 10 IC = 6 A; IB = 1.2 A; see Fig.6 IC = 5 A; IB = 1 A; see Fig.6 VCE = VCESMmax; VBE = 0; note 1 VCE = VCESMmax; VBE = 0; Tj = 125 °C; note 1 − − − − − − 10 10 VBEsat base-emitter saturation voltage BUW12F BUW12AF ICES collector-emitter cut-off current IEBO hFE emitter-base cut-off current DC current gain VEB = 9 V; IC = 0 VCE = 5 V; IC = 10 mA; see Fig.11 VCE = 5 V; IC = 1 A; see Fig.11 Switching times resistive load (see Figs 12 and 13) ton turn-on time BUW12F BUW12AF ts storage time BUW12F BUW12AF tf fall time BUW12F BUW12AF ICon = 6 A; IBon = IBoff = 1.2 A ICon = 5 A; IBon = IBoff = 1 A − − − − 0.8 0.8 µs µs ICon = 6 A; IBon = IBoff = 1.2 A ICon = 5 A; IBon = IBoff = 1 A − − − − 4 4 µs µs ICon = 6 A; IBon = IBoff = 1.2 A ICon = 5 A; IBon = IBoff = 1 A − − − − 1 1 µs µs Switching times inductive load (see Figs 14 and 15) ts storage time BUW12F BUW12AF tf fall time BUW12F BUW12AF Note 1. Measured with a half-sinewave voltage (curve tracer). ICon = 6 A; IB = 1.2 A; VCL = 250 V; Tc = 100 °C ICon = 5 A; IB = 1 A; VCL = 300 V; Tc = 100 °C − − 200 200 300 300 ns ns ICon = 6 A; IB = 1.2 A; VCL = 250 V; Tc = 100 °C ICon = 5 A; IB = 1 A; VCL = 300 V; Tc = 100 °C − − 1.9 1.9 2.5 2.5 µs µs 1997 Aug 14 4 Philips Semiconductors Product specification Silicon diffused power transistors BUW12F; BUW12AF handbook, full pagewidth 102 IC (A) MGB916 ICM max δ = 0.01 tp = 20 µs 10 IC max 50 µs 100 µs 200 µs II 1 500 µs I 1 ms 2 ms 5 ms 10 ms 20 ms DC 10−2 10−1 10−3 BUW12F BUW12AF 10−4 1 10 102 103 VCE (V) 104 Mounted without heatsink compound and 30 ±5 N force on centre of package. Tmb < 25 °C. I - Region of permissible DC operat.


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