BUV98V
NPN TRANSISTOR POWER MODULE
s s s
s s s
HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ...
BUV98V
NPN TRANSISTOR POWER MODULE
s s s
s s s
HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS: MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT
s
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCEV VEBO IC ICM IB I BM Pt ot T stg Tj VI SO Parameter Collector-Emitter Voltage (VBE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p = 10 ms) Base Current Base Peak Current (t p = 10 ms) Tot al Dissipation at T c = 25 o C Storage Temperature Max. Ope rating Junction Temperature Insulation Withstand Voltage (AC-RMS) Value 1000 450 7 30 60 8 16 150 -55 to 150 150 2500 Unit V V V A A A A W
o o o
VCEO(sus) Collector-Emitter Voltage (IB = 0)
C C C 1/7
September 1997
BUV98V
THERMAL DATA
R thj-ca se R t hc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied
o
Max Max
0.83 0.05
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol I CER ICEV I EBO Parameter Collecto r Cut-of f Current (RBE = 5 Ω ) Collecto r Cut-of f Current (VBE = -5V) Test Conditions VCE = VCEV VCE = VCEV VCE = VCEV VCE = VCEV T j = 100 o C T j = 100 o C Min. Typ. Max. 1 8 0. 4 4 2 450 9 1. 5 3. 5 1. 6 tp = 3 µ s 100 8 4 5 0. 4 V V V A/ µ s V V µs µs Unit mA mA mA mA mA V
Emitter Cut-off Current VEB = 5 V (I C...