® BUV98AV
NPN TRANSISTOR POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE s SPECIFIED AC...
® BUV98AV
NPN TRANSISTOR POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE s SPECIFIED ACCIDENTAL OVERLOAD
AREAS s FULLY INSULATED PACKAGE (U.L.
)COMPLIANT) FOR EASY MOUNTING t(ss LOW INTERNAL PARASITIC INDUCTANCE ucINDUSTRIAL APPLICATIONS ds MOTOR CONTROL ro )s SMPS & UPS ) - Obsolleettee PProduct(ss WELDING EQUIPMENT
Pin 4 not connected
ISOTOP INTERNAL SCHEMATIC DIAGRAM
solete Prroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS
b PSymbol
Parameter
O teVCEV Collector-Emitter Voltage (VBE = -5 V)
leVCEO(sus) Collector-Emitter Voltage (IB = 0)
oVEBO Emitter-Base Voltage (IC = 0)
sIC Collector Current
ObICM Collector Peak Current (tp < 10 ms)
Value 1000 450
7 30 60
Unit V V V A A
IB Base Current
8A
IBM Base Peak Current (tp < 10 ms) Ptot Total Dissipation at Tc = 25 oC
16 A 150 W
Visol Insulation Withstand Voltage (RMS) from All Four Terminals to External Heatsink
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
2500
-55 to 1...