BUV28
SILICON NPN SWITCHING TRANSISTOR
s s s s
SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY LOW SATURATION VOLTA...
BUV28
SILICON
NPN SWITCHING
TRANSISTOR
s s s s
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR VERY LOW SATURATION VOLTAGE FAST TURN-OFF AND TURN-ON
APPLICATIONS: SWITCHING
REGULATORS s SOLENOID / RELAY DRIVERS
s
DESCRIPTION High speed
transistor suited for low voltage applications. High frequency and efficiency converters switching
regulators motor control.
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P tot P tot T stg Tj Parameter Collector-base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation at Tc < 25 o C Total Dissipation at T c < 60 o C Storage Temperature Max. Operating Junction Temperature Value 400 200 7 10 15 2 4 85 65 -65 to +175 175 Unit V V V A A A A W W
o o
C C
June 1997
1/4
BUV28
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.76
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CER I CEX I EBO Parameter Collector Cut-off Current (R BE = 5 0Ω ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = 400V T c = 125 C V CE = 400V VBE = -1.5V T c = 125 C V EB = 5 V I C = 0.2 A I E = 50mA I C = 3A I C = 6A I C = 6A I B = 0.3A I B = 0.6A I B = 0.6A L = 25mH 200 7 30 0.7 1.5 2
o o
Min.
Typ.
Max. 3 1 1
Unit mA mA mA V V V V V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EBO V CE(sat) ...