BUT30

BUT30V NPN TRANSISTOR POWER MODULE s s s s s s s NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE Pin 4 not con nected APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V EBO IC I CM IB I BM P t ot T stg Tj V ISO July 1997 Parameter Collector-Emitter Voltage (V BE = -5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp = 10 ms) Base Current Base Peak Current (t p = 10 ms) Total Dissipation at T c = 25 o C St orage Temperature Max. Operating Junction Temperature Insulation W ithstand Voltage (AC-RMS) Value 200 125 7 100 150 20 30 250 -55 to 150 150 2500 Uni t V V V A A A A W o o V CEO(sus) Collector-Emitter Voltage (I B = 0) C C V 1/7 BUT30V THERMAL DATA R t hj-ca se R thc -h Thermal Resistance Junction-case Thermal Resistance Case-heats ink With Conductive Grease Applied Max Max 0.5 0.05 o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = -5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2 A L = 25 mH V c la mp = 125 V I C = 100 A IC IC IC IC IC IC IC IC = = = = = = = = 50 A 50 A 100 A 100 A 50 A 50 A 10...