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BUT211X

NXP
Part Number BUT211X
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Mar 23, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced ...
Datasheet PDF File BUT211X PDF File

BUT211X
BUT211X

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0 V TYP.
MAX.
850 400 5 10 32 2.
0 0.
1 UNIT V V A A W V µs Ths ≤ 25 ˚C IC = 3.
0 A; IB = 0.
4 A ICon = 3.
0 A; ...


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