DISCRETE SEMICONDUCTORS
DATA SHEET
BUT18; BUT18A Silicon diffused power transistors
Product specification Supersedes da...
DISCRETE SEMICONDUCTORS
DATA SHEET
BUT18; BUT18A Silicon diffused power
transistors
Product specification Supersedes data of 1997 Aug 13 1999 Jun 11
Philips Semiconductors
Product specification
Silicon diffused power
transistors
DESCRIPTION High-voltage, high-speed, glass-passivated
NPN power
transistor in a TO-220AB package.
dbook, halfpage
BUT18; BUT18A
APPLICATIONS Converters Inverters Switching
regulators Motor control systems.
MBK106
2 1 3
MBB008
PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter
1 2 3
Fig.1 Simplified outline (TO-220AB) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUT18 BUT18A VCEO collector-emitter voltage BUT18 BUT18A VCEsat ICsat IC ICM Ptot tf collector-emitter saturation voltage collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Fig.2 see Fig.2 Tmb ≤ 25 °C; see Fig.4 resistive load; see Figs 10 and 11 see Fig.7 open base 400 450 1.5 4 6 12 110 0.8 V V V A A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.15 UNIT K/W
1999 Jun 11
2
Philips Semiconductors
Product specification
Silicon diffused power
transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUT18 BUT18A VCEO collector-emitter voltage BUT18 BUT18A ICsat IC ICM IB IBM Pt...