SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
Description
BUT12A
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npntransistors in a metal envelope ,primarily for use in switching power circuits.
QUICK REFERENCE DATA
SYMBOL
TO-220
CONDITIONS VBE = 0V MIN MAX 1000 450 8 20 100 1.5 UNIT V V A A W V A V s
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitte...