Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2530AL
GENERAL DESCRIPTION
New genera...
Philips Semiconductors
Silicon Diffused Power
Transistor
Product specification
BU2530AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching
npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts
PARAMETER
Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time
CONDITIONS VBE = 0
Tmb ≤ 25 ˚C IC = 9.0 A; IB = 1.64 A ICsat = 9.0 A; IB(end) = 1.3 A
TYP.
9 3.5
MAX.
1500 800 16 40 125 5.0
4.5
UNIT
V V A A W V A µs
PINNING - SOT430
PIN DESCRIPTION
1 base
2 collector
3 emitter
heat collector sink
PIN CONFIGURATION
1 23
SYMBOL
c
b e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SY...