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BUT11APX Dataheets PDF



Part Number BUT11APX
Manufacturers NXP
Logo NXP
Description Silicon Diffused Power Transistor
Datasheet BUT11APX DatasheetBUT11APX Datasheet (PDF)

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Pt.

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 3.5 145 MAX. 1000 1000 450 5 10 32 1.5 160 UNIT V V V A A W V A ns Ths ≤ 25 ˚C ICsat=2.5A,IB1=0.5A,IB2=0.8A PINNING - SOT186A PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1000 450 1000 5 10 2 4 32 150 150 UNIT V V V A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W September 1998 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust VCEsat VBEsat hFE hFE hFEsat hFEsat PARAMETER Collector cut-off current 1 CONDITIONS MIN. 450 10 14 10 8 TYP. 0.25 22 25 13.5 10 MAX. 1.0 2.0 10 1.5 1.3 35 35 17 12 UNIT mA mA mA V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 9 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 3.0 A; IB = 0.6 A Base-emitter saturation voltage IC = 2.5 A; IB = 0.33 A DC current gain IC = 5 mA; VCE = 5 V IC = 500 mA; VCE = 5 V IC = 2.5 A; VCE = 5 V IC = 3.5 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time CONDITIONS ICsat = 2.5 A; IB1 = -IB2 = 0.5 A; RL = 75 ohms; VBB2 = 4 V; TYP. MAX. UNIT µs µs µs µs ns µs ns 0.5 3.3 0.33 0.7 4 0.45 ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH; -VBB = 5 V ICsat = 2.5 A; IB1 = 0.5 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1.4 145 1.6 160 1.7 160 1.9 200 1 Measured with half sine-wave voltage (curve tracer). September 1998 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX + 50v 100-200R IC 90 % ICsat 90 % 10 % Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 1R IB ts ton toff IB1 10 % tr 30ns -IB2 tf Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. IC / mA VCC 250 200 LC IB1 100 LB T.U.T. -VBB 0 VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH VCC ICsat 90 % IC RL VIM 0 tp IB RB T.U.T. ts toff IB1 tf 10 % t T -IB2 t Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. Fig.6. Switching times waveforms with inductive load. September 1998 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX ICon 90 % IC 2.0 VCEsat/V 1.6 IC=1A 1.2 2A 3A 4A 10 % ts toff IB IBon t -IBoff 0.0 0.01 0.10 IB/A 1.00 10.00 tf t 0.8 0.4 Fig.7. Switching times waveforms with inductive load. Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25˚C. 120 110 100 90 80 70 60 50 40 30 20 10 0 % Normalised Derating with heatsink compound 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VBEsat/V P tot 0 20 40.


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