BUT11AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER TRANSISTOR
Highvoltage,high-speed switching npn transistors in a me...
BUT11AF
GENERAL DESCRIPTION
SILICON DIFFUSED POWER
TRANSISTOR
Highvoltage,high-speed switching
npn transistors in a metal envelope ,primarily for use in switching power circuits.
QUICK REFERENCE DATA
SYMBOL
TO-220F
CONDITIONS VBE = 0V MIN MAX 1000 450 5 10 40 1.5 UNIT V V A A W V A V s
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
Tmb 25 IC = 2.5A; IB = 0.5A f = 16KHz IC=2.5A,IB1=-IB2=0.5A,VCC=150V
1.0
LIMITING VALUES
SYMBOL
VCESM VCEO VEBO IC IB IBM Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage(open collector) Collector current (DC) Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
MIN
Tmb 25 -55
MAX 1000 450 5 5 2 4 40 150 150
UNIT V V V A A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf
PARAMETER Collector-emitter cut-off current
Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 1MHz Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fa...