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0.5–10 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-25735
Features
• High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz
• High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz
• Low Noise Figure: 1.2 dB Typical at 4 GHz
• Cost Effective Ceramic Microstrip Package
Description
The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective
microstrip package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
35 micro-X Package
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
NFO Optimum Noise Figure: VDS = 3 V, IDS = 20 mA
GA Gain @ NFO: VDS = 3 V, IDS = 20.