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ATF-25735 Dataheets PDF



Part Number ATF-25735
Manufacturers HP
Logo HP
Description 0.5-10 GHz General Purpose Gallium Arsenide FET
Datasheet ATF-25735 DatasheetATF-25735 Datasheet (PDF)

0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz • High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic Microstrip Package Description The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in general purpose amplifier and oscil.

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0.5–10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features • High Output Power: 19.0␣ Bm Typical P 1dB at 4␣ GHz • High Gain: 12.5␣ dB Typical G 1 dB at 4 GHz • Low Noise Figure: 1.2 dB Typical at 4 GHz • Cost Effective Ceramic Microstrip Package Description The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in general purpose amplifier and oscillator applications in the 0.5-10 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 35 micro-X Package Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions NFO Optimum Noise Figure: VDS = 3 V, IDS = 20 mA GA Gain @ NFO: VDS = 3 V, IDS = 20.


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