0.5 – 10 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-25570
Features
High Output Power: 20.5 dBm Typical P1 dB at 4 GHz
Low Noise Figure: 1.0 dB Typical at 4 GHz
High Associated Gain: 14.0 dB Typical at 4 GHz
Hermetic Gold-Ceramic Microstrip Package
Description
The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate...