ATF-45101

2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-45101 Features High Output Power: 29.0␣ dBm Typical P 1dB at 4␣ GHz High Gain at 1dB Compression: 10.0␣ dB Typical G 1dB at 4␣ GHz High Power Efficiency: 38% Typical at 4␣ GHz Hermetic Metal-Ceramic Stripline Package Description The ATF-45101 is a gallium arsenide Schottky-barrier-gate field effect transistor designed for medium power, linear amplification in the 2 to 8 GHz frequency range. This nominally 0.5 micron gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers. Total gate periphery is 2.5 millimeters. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. This device is suitable for applications in space, airborne, military ground and shipboard, and commercial environments. It is supplied in a hermetic high reliability package with low parasitic reactance and minimum thermal resistan...