ATF-26884

2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features High Output Power: 18.0␣ dBm Typical P 1dB at 12␣ GHz High Gain: 9.0 dB Typical GSS at 12␣ GHz Low Cost Plastic Package Tape-and-Reel Packaging Option Available[1] Description The ATF-26884 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 84 Plastic Package Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units GSS NFO GA P1 dB gm IDSS VP Tuned Small Signal Gain: VDS = 5 V, IDS = 30 mA Optimum Noise Figure: VDS = 3 V, IDS = 10 mA ...