ATF-10236

0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 Features Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz Low Bias: VDS= 2 V, IDS= 20␣ mA High Associated Gain: 13.0␣ dB Typical at 4␣ GHz High Output Power: 20.0␣ dBm Typical P1dBat 4␣ GHz Cost Effective Ceramic Microstrip Package Tape-And-Reel Packaging Option Available [1] Description The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.5-12␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA ...