ATF-13100

2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features Low Noise Figure: 1.1 dB Typical at 12 GHz High Associated Gain: 9.5 dB Typical at 12 GHz High Output Power: 17.5 dBm Typical P1 dB at 12 GHz Description The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applications in the 2-18␣ GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. The recommended mounting procedure is to die attach at a stage temperature of 300°C using a gold-tin preform under forming gas. Assembly can be preformed with either wedge or ball bonding using 0.7 mil gold wire. See also “Chip Use” in the APPLICATIONS section. Chip Outline D S G S Electrical Specifications, T...