0.5 – 12 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-10100
Features
• Low Noise Figure: 0.5 dB Typical at 4 ...
0.5 – 12 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-10100
Features
Low Noise Figure: 0.5 dB Typical at 4 GHz
Low Bias: VDS =2V,IDS␣ =␣ 25mA
High Associated Gain: 14.0 dB Typical at 4 GHz
High Output Power: 21.0 dBm Typical P1 dB at 4 GHz
Description
The ATF-10100 is a high performance gallium arsenide
Schottkybarrier-gate field effect
transistor
chip. Its premium noise figure makes this device appropriate for use in the first stage of low noise amplifiers operating in the 0.5-12␣ GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
Chip Outline
G SD
G S
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
NFO Optimum Noise Figure: VCE = 2 V, IDS = 25 mA
f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz
GA Gain @ NFO; VDS = 2 V, IDS...
