0.5 – 12 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-10136
Features
Low Noise Figure: 0.5 dB Typical at 4 GHz
Low Bias: VDS = 2 V, IDS = 20 mA
High Associated Gain: 13.0 dB Typical at 4 GHz
High Output Power: 20.0 dBm Typical P1 dB at 4 GHz
Cost Effective Ceramic Microstrip Package
Tape-and Reel Packaging Option Available [1]
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