BUP410D

BUP 410D IGBT With Antiparallel Diode Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Pin 1 G Type BUP 410D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4425-A2 Pin 3 E VCE 600V IC 13A Package TO-220 AB VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 13 8 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 26 16 TC = 25 °C TC = 90 °C Diode forward current IF 11 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 72 TC = 25 °C Power dissipation Ptot 50 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-12-1996 BUP 410D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD ≤ 2.5 3.1 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 - V VGE = VCE, IC = 0.35 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 6 A, Tj = 25 °C VGE = 15 V, IC = 6 A, Tj = 125 °C VGE = 15 V, IC = 12 A, Tj = 25 °C VGE = 15 V, I...