Document
BUP 403
IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 G Type BUP 403 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code C67078-A4406-A2 Pin 3 E
VCE
600V
IC
42A
Package TO-220 AB
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current, (limited by bond wire)
± 20 A 42 32
TC = 60 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
104 64
TC = 25 °C TC = 90 °C
Avalanche energy, single pulse
EAS
65
mJ
IC = 25 A, VCC = 50 V, RGE = 25 Ω L = 200 µH, Tj = 25 °C
Power dissipation
Ptot
200
W - 55 ... + 150 - 55 ... + 150 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Jul-31-1996
BUP 403
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC
≤ 0.63
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 -
V
VGE = VCE, IC = 0.7 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 30 A, Tj = 25 °C VGE = 15 V, IC = 30 A, Tj = 125 °C VGE = 15 V, IC = 60 A, Tj = 25 °C VGE = 15 V, IC = 60 A, Tj = 125 °C
Zero gate voltage collector current
ICES
150
µA nA 100
VCE = 600 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
IGES
VGE = 25 V, VCE = 0 V
AC Characteristics Transconductance
gfs
6 1600 170 100 -
S pF 2150 260 150
VCE = 20 V, IC = 30 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Jul-31-1996
BUP 403
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) Values typ. max. Unit
ns 50 75
VCC = 300 V, VGE = 15 V, IC = 30 A RGon = 33 Ω
Rise time -
tr
80 120
VCC = 300 V, VGE = 15 V, IC = 30 A RGon = 33 Ω
Turn-off delay time
td(off)
250 340
VCC = 300 V, VGE = -15 V, IC = 30 A RGoff = 33 Ω
Fall time
tf
500 700
VCC = 300 V, VGE = -15 V, IC = 30 A RGoff = 33 Ω
Semiconductor Group
3
Jul-31-1996
BUP 403
Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C
220 W
Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C
55 A
Ptot
180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 160
IC
45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 °C 160
TC
TC
Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T
10 0
IGBT
A K/W
IC
10 2
t = 12.0µs p
ZthJC
10 -1
100 µs
10 1 D = 0.50 0.20
1 ms
10 -2
0.10 0.05
10 0
10 ms
single pulse DC 10 -1 0 10 10 -3 -5 10
0.02 0.01
10
1
10
2
V 10
3
10
-4
10
-3
10
-2
10
-1
s 10
0
VCE
tp
Semiconductor Group
4
Jul-31-1996
BUP 403
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
60 A 50 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
60 A 50 17V 15V 13V 11V 9V 7V
IC
45 40 35 30 25 20 15 10 5 0 0
IC
45 40 35 30 25 20 15 10 5
1
2
3
V
5
0 0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
60 A 50
IC
45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE
Semiconductor Group
5
Jul-31-1996
BUP 403
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 33 Ω
10 3
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, IC = 30 A
10 3
tf t t ns tdoff
tf tdoff ns
tr 10 2 10
2
tr tdon
tdon
10 1 0
10
20
30
40
50
60
A IC
80
10 1 0
20
40
60
80
Ω
120
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 33 Ω
10 mWs E 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 A IC 80 Eoff
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300V, VGE = ± 15 V, IC = 30 A
5.0 mWs E 4.0 3.5 3.0 2.5 Eoff Eon
Eon
2.0 1.5 1.0 0.5 0.0 0 20 40 60 80
Ω
120
RG
Semiconductor Group
6
Jul-31-1996
BUP 403
Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 30 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
nF
VGE
16 14 12 10 8
C
100 V
300 V
Ciss 10 0
Coss 10 -1 Crss
6 4 2 0 0 10 -2 0
20
40
60
80
100
nC
130
5
10
15
20
25
30
Q Gate
V 40 VCE
Short circuit safe operating area
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150°C parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 50 nH
10
ICpuls = f (VCE) , Tj = 150°C parameter: VGE = 15 V
2.5
I Csc/I C(90°C)
I Cpuls/I C
6
1.5
4.