IGBT
BUP 313D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop • High switching speed • Low tail cu...
Description
BUP 313D
IGBT With Antiparallel Diode
Preliminary data
Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Pin 1 G Type BUP 313D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67040-A4228-A2 Pin 3 E
VCE
IC
Package TO-218 AB
1200V 32A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 32 20
TC = 25 °C TC = 90 °C
Pulsed collector current, tp = 1 ms
ICpuls
64 40
TC = 25 °C TC = 90 °C
Diode forward current
IF
18
TC = 90 °C
Pulsed diode current, tp = 1 ms
IFpuls
108
TC = 25 °C
Power dissipation
Ptot
200
W -55 ... + 150 -55 ... + 150 °C
TC = 25 °C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Dec-02-1996
BUP 313D
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC RthJCD
≤ 0.63 ≤ 1.25
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.7 3.3 3.4 4.3 6.5 3.2 3.9 -
V
VGE = VCE, IC = 0.35 mA, Tj = 25 °C
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C VGE = 15 V, IC = 30 A, Tj = 25 °...
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