BUP306D

BUP 306D IGBT With Antiparallel Diode Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 306D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-218 AB Ordering Code Q67040-A4222-A2 1200V 23A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 23 15 TC = 25 °C TC = 90 °C Pulsed collector current, tp = 1 ms ICpuls 46 30 TC = 25 °C TC = 90 °C Diode forward current IF 18 TC = 90 °C Pulsed diode current, tp = 1 ms IFpuls 108 TC = 25 °C Power dissipation Ptot 165 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Jul-30-1996 BUP 306D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 0.63 1.25 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 6.5 3.3 4.3 V VGE = VCE, IC = 0.7 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 10 A, Tj = 25 °C VGE = 15 V, IC = 10 A, Tj = 125 °C Zero gate voltage collector current ICES 0.4 mA nA ...