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GPT03N80

Greatpower
Part Number GPT03N80
Manufacturer Greatpower
Description POWER FIELD EFFECT TRANSISTOR
Published Nov 8, 2017
Detailed Description GPT03N80 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to ...
Datasheet PDF File GPT03N80 PDF File

GPT03N80
GPT03N80

Overview
GPT03N80 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
      Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP TO-251/TO251S Top View Front View TO-252 Front View D GATE DRAIN SOURCE GATE DRAIN SOURC...


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