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GPT05N70

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POWER FIELD EFFECT TRANSISTOR


Description
GPT05N70 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand  Higher Current Rating high energy in the avalanche mode and switch efficiently. This  Lower Rds(on) new high energy device also offers a drain-to-source diode  Lower Capacitances with fast recovery time. Designed for high v...



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GPT05N70

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