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GPT01N65A

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POWER FIELD EFFECT TRANSISTOR


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GENERAL DESCRIPTION GPT01N65A POWER FIELD EFFECT TRANSISTOR FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design ...



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GPT01N65A

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