Document
BULT118
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
t(s)Applications uc■ Electronic ballast for fluorescent lighting rod■ Flyback and forward single transistor low power P t(s)converters lete ucDescription so rodThe device is manufactured using high voltage
multi-epitaxial planar technology for high
b Pswitching speeds and medium voltage capability. - O teIt uses a cellular emitter structure with planar ) leedge termination to enhance switching speeds t(s owhile maintaining the wide RBSOA. c bsThe device is designed for use in lighting u Oapplications and low cost switch-mode power d -supplies.
SOT-32
1 2 3
Figure 1. Internal schematic diagram
Obsolettee PPrrooduct(s)Table 1. Device summary
leOrder code
Marking
ObsoBULT118
BULT118
Package SOT-32
Packaging Tube
July 2008
Rev 2
1/10
www.st.com
10
Electrical ratings
1 Electrical ratings
BULT1.