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GPT08N60D

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POWER FIELD EFFECT TRANSISTOR


Description
GPT08N60 / GPT08N60D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic...



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GPT08N60D

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