GPT04N60A

GPT04N60A POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.       Higher Current Rating Lower Rds(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO-220/TO-220FP TO-251/ TO-251S Top View Front View TO-252 Front View D GATE DRAIN SOURCE GATE DRAIN SOURCE G 12 3 123 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue Total Power Dissipation TO-251/ TO-251S /TO-252 TO-220 TO-220FP Derate above 25℃ TO-251/ TO-251S /TO-252 TO-220 TO-220FP Operating and...