BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1997, Power Innovations Limited, UK FEBRUARY...
BULD50KC, BULD50SL
NPN SILICON
TRANSISTOR WITH INTEGRATED DIODE
Copyright © 1997, Power Innovations Limited, UK FEBRUARY 1994 - REVISED SEPTEMBER 1997
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Designed Specifically for High Frequency Electronic Ballasts Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability Diode trr Typically 1 µs New Low-Height SL Power Package, TO220 Pin-Compatible Tightly Controlled
Transistor Storage Times Voltage Matched Integrated
Transistor and Diode Characteristics Optimised for Cool Running Diode-
Transistor Charge Coupling Minimised to Enhance Frequency Stability
B C E B C E
TO-220 PACKAGE (TOP VIEW)
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1 2 3
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Pin 2 is in electrical contact with the mounting base.
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MDTRACA
SL PACKAGE (TOP VIEW) 1 2 3
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description
The new BULDxx range of
transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching
transistors has tightly controlled storage times and an integrated fast trr antiparallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus
transistor. The integrated diode has minimal charge coupling with the
transistor, increasing frequency stability, especially in lower power circuits where the circulating currents are low. By design, this new device offers a voltage matched integrated
transistor and anti-parallel diode.
device symbol
C
B
E
absolute maximum ratings at 25°C ¦ (un...