®
BULB128D-1
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Ordering Code BULB128D-1
s
Marking BULB128D
Shipment T...
®
BULB128D-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
Ordering Code BULB128D-1
s
Marking BULB128D
Shipment Tube
s s s s
s s
STMicroelectronics PREFERRED SALESTYPE
NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
3 12
I2PAK (TO-262)
APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
s
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, IB = 2 A, t p < 10 µ s, T j < 150 o C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 V (BR)EBO 4 8 2 4 70 -65 to 150 150 Unit V V V A A A A W o C o C 1/7
September 2003
BULB128D-1
THERMAL DATA
R thj-case R thj-amb Thermal Resi...