LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL76A
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEE...
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL76A
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED
NPN SILICON POWER
TRANSISTOR
Designed for use in electronic ballast applications
6.3
3.6 Dia.
15.1
18.0
1 2 3
1.3 14.0
0.85
0.5
SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING
FEATURES
Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages.
2.54 2.54
TO-220
Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IB Ptot Tj Tstg Semelab plc. Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase = 25°C Junction Temperature Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
350V 160V 10V 60A 12A 85W 150°C –55 to +150°C
Prelim. 2/97
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL76A
Test Conditions
Min.
160 350 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 100mA Collector – Base ...