Document
LAB
MECHANICAL DATA Dimensions in mm
10.2 1.3 4.5
SEME
BUL74B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Designed for use in electronic ballast applications
6.3
3.6 Dia.
15.1
18.0
1 2 3
1.3 14.0
0.85
• • • •
0.5
SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING
FEATURES
• Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages.
2.54 2.54
TO-220
Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IB Ptot Tj Tstg Semelab plc. Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase = 25°C Junction Temperature Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
800V 400V 10V 15A 5A 100W 150°C –55 to +150°C
Prelim. 2/97
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL74B
Test Conditions
Min.
400 800 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut–Off Current Collector – Emitter Cut–Off Current Emitter Cut–Off Current IC = 1mA IE = 1mA VCB = 800V TC = 125°C VCE = 390V VEB = 9V TC = 125°C IC = 0.1A VCE = 1V VCE = 1V VCE = 5V VCE = 5V IB = 0.1A IB = 0.5A IB = 2A IB = 0.5A IB = 2A VCE = 4V f = 1MHz
V 10 100 10 10 100
µA µA µA
18 10 11 8
50 30 30 20 0.1 0.5 0.8 1.2 1.5 16 90 V V —
hFE*
DC Current Gain
IC = 5A IC = 7A IC = 10A IC = 1A
VCE(sat)*
Collector – Emitter Saturation Voltage IC = 5A IC = 10A IC = 5A IC = 10A IC = 0.2A VCB = 10V
VBE(sat)*
Base – Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance
ft Cob
MHz pF
* Pulse test tp = 300µs , δ < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
.