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BUL74B Dataheets PDF



Part Number BUL74B
Manufacturers Seme LAB
Logo Seme LAB
Description NPN Transistor
Datasheet BUL74B DatasheetBUL74B Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL74B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 • • • • 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across ful.

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LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL74B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 6.3 3.6 Dia. 15.1 18.0 1 2 3 1.3 14.0 0.85 • • • • 0.5 SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE HIGH CURRENT EFFICIENT POWER SWITCHING FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. 2.54 2.54 TO-220 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tj Tstg Semelab plc. Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tcase = 25°C Junction Temperature Operating and Storage Temperature Range Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 800V 400V 10V 15A 5A 100W 150°C –55 to +150°C Prelim. 2/97 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO SEME BUL74B Test Conditions Min. 400 800 10 Typ. Max. Unit ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut–Off Current Collector – Emitter Cut–Off Current Emitter Cut–Off Current IC = 1mA IE = 1mA VCB = 800V TC = 125°C VCE = 390V VEB = 9V TC = 125°C IC = 0.1A VCE = 1V VCE = 1V VCE = 5V VCE = 5V IB = 0.1A IB = 0.5A IB = 2A IB = 0.5A IB = 2A VCE = 4V f = 1MHz V 10 100 10 10 100 µA µA µA 18 10 11 8 50 30 30 20 0.1 0.5 0.8 1.2 1.5 16 90 V V — hFE* DC Current Gain IC = 5A IC = 7A IC = 10A IC = 1A VCE(sat)* Collector – Emitter Saturation Voltage IC = 5A IC = 10A IC = 5A IC = 10A IC = 0.2A VCB = 10V VBE(sat)* Base – Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance ft Cob MHz pF * Pulse test tp = 300µs , δ < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 2/97 .


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