LAB
MECHANICAL DATA Dimensions in mm
0.32 0.24
SEME
BUL72B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED N...
LAB
MECHANICAL DATA Dimensions in mm
0.32 0.24
SEME
BUL72B
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED
NPN SILICON POWER
TRANSISTOR
13°
0.10 0.02 16° max. 1.70 max. 10° max. 6.7 6.3 3.1 2.9
Designed for use in electronic ballast applications SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING
4
3.7 7.3 3.3 6.7
1
2
3
1.05 0.85
2.30 4.60
0.80 0.60
FEATURES
Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Pin 3 - Emitter
SOT-223
Pin 1 - Base Pin 2 - Collector
Pin 4 - Collector
Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc. Collector – Base Voltage(IE=0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
200V 100V 10V 8A 12A 2A 2W –55 to +150°C
Prelim. 2/97
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO
SEME
BUL72B
Test Conditions
Min.
100 250 10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTIC...