BUL49A

BUL49A MECHANICAL DATA Dimensions in mm 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING EFFICIENT POWER SWITCHING MILITARY AND HI–REL OPTIONS EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) 1.63 (0.064) 1.52 (0.060) 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls FEATURES Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Ion implant and high accuracy masking for tight control of characteristics from batch to batch. Triple Guard Rings for improved control of high voltages. 1 16.97 (0.668) 16.87 (0.664) TO3 Pin 1 – Base Pin 2 – Emitter Case is Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) Ptot Tstg Rth Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Peak Collector Current Total Dissipation at Tcase = 25°C Operating and Storage Temperature Range Thermal Resistance (junction-case) Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website: http://www.semelab.co.uk E-mail: [email protected]...