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BUL310
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE NP...
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BUL310
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
s
s s s s
s s s
STMicroelectronics PREFERRED SALESTYPE
NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC LARGE RBSOA TO-220
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APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (t p <5 ms) Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Temperature
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Value 1000 500 9 5 10 3 4 75 -65 to 150 150
Uni t V V V V A A A W
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C C
January 1999
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BUL310
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.65 62.5
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C/W C/W
ELECTRICAL CHARACTERISTICS (Tca...