Philips Semiconductors
Product Specification
Insulated Gate Bipolar Transistor (IGBT)
BUK856-800A
GENERAL DESCRIPTIO...
Philips Semiconductors
Product Specification
Insulated Gate Bipolar
Transistor (IGBT)
BUK856-800A
GENERAL DESCRIPTION
Fast-switching N-channel insulated gate bipolar power
transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications.
QUICK REFERENCE DATA
SYMBOL VCE IC Ptot VCEsat Eoff PARAMETER Collector-emitter voltage Collector current (DC) Total power dissipation Collector-emitter on-state voltage Turn-off energy Loss MAX. 800 24 125 3.5 1.0 UNIT V A W V mJ
PINNING - TO220AB
PIN 1 2 3 tab gate collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
g
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCGR ±VGE IC IC ICLM ICM Ptot Tstg Tj PARAMETER Collector-emitter voltage Collector-gate voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector Current (Clamped Inductive Load) Collector current (pulsed peak value, on-state) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGE = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tj ≤ Tjmax. VCL ≤ 500 V Tj ≤ Tjmax. Tmb = 25 ˚C MIN. -5 - 55 MAX. 800 800 30 24 12 40 50 125 150 150 UNIT V V V A A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS In free air TYP. 60 MAX. 1.0 UNIT K/W K/W
March 1993
1
Rev 1.000
Philips Semiconduc...