Philips Semiconductors
Product specification
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT
GENERAL DESC...
Philips Semiconductors
Product specification
Insulated Gate Bipolar
Transistor Protected Logic-Level IGBT
GENERAL DESCRIPTION
Protected N-channel logic-level insulated gate bipolar power
transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV.
BUK856-400 IZ
QUICK REFERENCE DATA
SYMBOL PARAMETER V(CL)CER VCEsat IC Ptot ECERS Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC) Total power dissipation Clamped energy dissipation MIN. TYP. MAX. UNIT 350 400 500 2.2 20 100 300 V V A W mJ
PINNING - TO220AB
PIN 1 2 3 tab gate collector emitter collector DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
g
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCE ±VGE IC IC ICM ICLM ECERS ECERR1 EECR1 Ptot Tstg Tj PARAMETER Collecter-emitter voltage Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (pulsed peak value, on-state) Collector current (clamped inductive load) Clamped turn-off energy (non-repetitive) Clamped turn-off energy (repetitive) Reverse avalanche energy (repetitive) Total power dissipation Storage temperature Operating Junction Temperature CONDITIONS tp ≤ 500 µs Continuous Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C; tp ≤ 10 ms; VCE ≤ 15 V 1 kΩ ≤ RG ≤ 10 kΩ Tmb = 25 ˚C; IC = 10 A; RG = 1 ...
