BUK75/7626-100B
TrenchMOS™ standard level FET
Rev. 01 — 11 April 2003 Product data
1. Product profile
1.1 Description
N-...
BUK75/7626-100B
TrenchMOS™ standard level FET
Rev. 01 — 11 April 2003 Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power
transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK7526-100B in SOT78 (TO-220AB) BUK7626-100B in SOT404 (D2-PAK).
1.2 Features
s Very low on-state resistance s 175 °C rated s Q101 compliant s Standard level compatible.
1.3 Applications
s Automotive systems s Motors, lamps and solenoids s 12 V, 24 V and 42 V loads s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 144 mJ s ID ≤ 49 A s RDSon = 22 mΩ (typ) s Ptot ≤ 157 W.
2. Pinning information
Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404 simplified outlines and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d)
2
MBK106
Simplified outline
mb
Symbol
[1]
mb
d
g s
MBB076
1 2 3
1
3
MBK116
SOT78 (TO-220AB)
[1]
SOT404
(D2-PAK)
It is not possible to make connection to pin 2 of the SOT404 package.
Philips Semiconductors
BUK75/7626-100B
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 Tmb = 100 °C; VGS = 10 V; Figure 2 IDM Ptot Tstg Tj IDR IDRM peak drain current tot...
